SJ 50597/17-1994.Semiconductor integrated circuits Detil specification for types JT54LS28, JT54LS7,JT54LS38, JT54LS40 LS-TTL Buffers.1范围1.1主题内容SJ 50597/17规定了半导体...
SJ 50597/16-1994.Semiconductor integrated circuits Detail specification for types JW137,JW137M and JW137L three terminal adjustabale negative voltage regulators.1范围1.1主题内容...
SJ/T 1486-2016.Semiconductor discrete devices Detail specification for type 3CG180 high frequency high voltage low power PNP silicon transistor.引言本标准适用于3CG180型硅P...
SJ/T 1480-2016.Semiconductor discrete devices Detail specification for type 3CG130 high frequency low power PNP silicon transistor.引言本标准适用于3CG130型硅PNP高频小功率...
SJ/T 1477-2016.Semiconductor discrete devices Detail specification for type 3CG120 high frequency low power PNP silicon transistor.引言本标准适用于3CG120型硅PNP高频小功率...
SJ/T 1472-2016.Semiconductor discrete devices Detail specification for type 3CG1 10 high frequency low power PNP silicon transistor.引言本标准适用于3CG110型硅PNP高频小功...
SJ/T 99-2016.Series of laminations and laminations stack height for transformers and chockes.1范围SJ/T 99规定了电子设备中的电源变压器、音频变压器、音频扼流圈...
SJ/T 1833-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK103.引言本规范适用于3DK103型NPN硅小功率开关晶...
SJ/T 1832-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK102.引言本规范适用于3DK102型NPN硅小功率开关晶...
SJ/T 1830-2016.Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK101.引言本规范适用于3DK101型NPN硅小功率开关晶...
