SJ 20013-1992.Semiconductor discrete device Detail specification for silicon N-channel deplition mode field - effect transistor of type CS10 GP、GT and GCT classes.1范围1.1主题内...
SJ 20012-1992.Semiconductor discrete device Detail specification for silicon N-channel deplition mode field - effect transistor of type CS4 GP, GT and GCT classes.1范围1.1主题内容...
SJ 20011-1992.Semiconductor discrete device Detail specification for silicon N - channel deplition mode field- effect transistor of types CS1、CS4、CS10 GP ,GT and GCT classes.1范围...
SJ 20463/16-2003.Detail specification for oscilloscope of type 20SJ260Y14.1范围SJ 20463/16规定了20SJ260Y14型示波管的详细要求。SJ 20463/16适用于20SJ260Y14型示波管...
SJ 20463/15-2003.Detail specification for color display tube of type 26SG301Y22-DC70.1范围SJ 20463/15规定了26SG301Y22-DC70型彩色显示管的详细要求。SJ 20463/15适用于...
SJ 20463/14-2003.Detail specification for color display tube of type 16SG302Y22-DC60.1范围SJ 20463/14规定了16SG302Y22-DC60型彩色显示管的详细要求。SJ 20463/14适用于...
SJ 20463/13-2003.Detail specification for monochrome display tube of type 5SG31Y43.1范围SJ 20463/13规定了5SG31Y43型单色显示管的详细要求。SJ 20463/13适用于SSG31Y4...
SJ 20462/1-2003.Detail specification for photomultiplier tube of type GDB-593.11范围SJ 20462/1规定了GDB-593型光电倍增管的详细要求。SJ 20462/1适用于GDB-593型光电...
SJ 20869-2003.Measuring methods for LiNbO3 integrated optical guided-wave modulators.1范围SJ 20869规定了铌酸锂集成光学波导调制器的测试方法。SJ 20869适用于铌...
SJ 20868-2003.Measuring methods for charge coupled imaging device.1范围SJ 20868规定了光谱范围为350 nm~1100nm的线阵和面阵电荷耦合成像器件(以下简称器件)的...
