SJ 20023/2-1996.Detail specification for phase conformance travelling wave tube of type B-5941.1范围1.1主题内容SJ 20023/2规定了B-5941型相位一致性行波管的详细要求...
SJ 20023/3-1997.Detail specification for travelling wave tube of type BM-1948.1范围1.1主题内容SJ 20023/3规定了BM-1948型行波管的详细要求。1.2 适用范围本规范适...
SJ/T 10715-1996.Capability detail specification:single and double sided printed boards with plain holes.1总则1.1 范围SJ/T 10715详细规范(CapDS)是根据IEC/PQC89制定的,它涉...
SJ 20018-1992.Detail specification for disk - seal tube of type FM24.1范围1.1主题内容SJ 20018规定了FM24型盘封管的详细要求。1.2适用范围SJ 20018适用于FM24型盘...
SJ 20015-1992.Semiconductor discrete deviceDetail specification for NPN silicon high-frequency low-power transistor for type 3DG130 GP、GT and GCT classes.1范围1.1主题内容SJ ...
SJ 20016-1992.Semiconductor diserete device Detail specification for NPN silicon low-power biht-reverse- voltage transistor for type 3DG182 GP、GT and GCT classes.1范围1.1主题内...
SJ 20017-1992.Detail specification for disk-seal tubes of type FM22、FM24、FM25.1范围1.1主题内容SJ 20017规定了FM22型盘封管的详细要求。1.2适用范围本规范适用...
SJ 20021-1992.Detail specification for transmitting tube of type FU101F.1范围1.1主题内容SJ 20021规定了FU101F 型发射管的详细要求。1.2 适用范围本规范适用于...
SJ 1553-1980.SJ 1553条件(以下简称总技)适用于-80~+315℃温度范围内的各种测温型负温度系数热敏电阻器。它具有较高的稳定性、互换性和阻值精...
SJ 20014-1992.Semiconductor discrete device Detail specification for silicon low-power transistor for types 3CG110、3DG130、3DG 182 GP、GT and types GCT classes.1范围1.1主题内...
