行业标准

QB 1782-1993.5.3相对密度的测定， 25/25C见GB 11540.5.4折 光指数的测定，20C见CB/T 14454.4。5.5溶解度的测定，25C见GB/T 14457.1。5.6含醇量的测定见GB/T...

QB 1781-1993.6检验规则6.1邻氨基苯甲酸甲酯每批成品应由生产厂检验部门负责检验，生产厂应保证出厂产品都符合本标准的要求。每批出厂产品...

QB 1780-1993.6检验规则6.1苯甲酸苄酯每批成品应由生产厂检验部门负责检验,生产厂应保证出厂产品都符合本标准的要求。每批出厂产品应附有...

QB 1779-1993.6检验规则6.1苯甲酸乙酯每批成品应由生产厂检验部门负责检验,生产厂应保证出厂产品都符合本标准的要求。每批出厂产品应附有...

SJ 20070-1992.Seniconductor discrete deviceDetail specification for silicon switching dlode for type 2CK105.1范園1.1主题内容SJ 20070规定了2CK105型硅开关二极管(以下简...

SJ 20069-1992.Semiconductor discrete device Detail specification for silicon switching diode for type 2CK76,2CK105 and 2CK4148.1范围1.1主题内容SJ 20069规定了2CK76型硅开关...

SJ 20068-1992.Semiconductor discrete device Detail specification for lower noise for silion voltage reference diode for type 2DW14~18.1范图1.1主题内容SJ 20068规定了2DW14~18型...

SJ 20067-1992.Semiconductor discrete device Detail specification for type 2CZ30 silicon rectifier diode.1范围1.1主题内容SJ 20067规定了2CZ30型硅整流二极管(以下简称器...

SJ 20066-1992.Semiconductor discrete deviceDetail specification for type 2CL3 silicon high voltage rectifier stack.1范围1.1主题内容SJ 20066规定了2CL3型硅高压整流堆(以...

SJ 20071-1992.Semiconductor discrete device Detail specificatioe for ilicon switcbiog diede for type 2CK4148.1范園1.1主题内容SJ 20071规定了2CK4148型硅开关二极管(以下...